2SK3863

2010-04-13

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK3863

Switching Regulator Applications

Characteristic

Symbol

Rating

Unit

Drain-source voltage

500

V

500

V

Gate-source voltage

±30

V

DC

(Note 1)

5

Drain current

Pulse (t

= 1 ms)

(Note 1)

20

A

Drain power dissipation (Tc

= 25°C)

40

W

Single pulse avalanche energy

(Note 2)

180

mJ

Avalanche current

5

A

Repetitive avalanche energy (Note 3)

4

mJ

Channel temperature

150

°C

Storage temperature range

-55 to 150

°C

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

3

2

1

1. GATE

2. DRAIN

（

HEAT SINK）

3. SOURSE

0.6 MAX.

0.6 MAX.

2.3

6.8 MAX.

0.95 MAX.

0.6

± 0.15

5.2

± 0.2

1

2

3

2.3

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7B5B

Weight: 0.36 g (typ.)

2.3

0.6 MAX.

0.6 MAX.

2.3

6.8 MAX.

0.95 MAX.

0.6

± 0.15

5.2

± 0.2

1

2

3

2.3

2.3

0.6

± 0.15

3

2

1

1. GATE

2. DRAIN

（

HEAT SINK）

3. SOURSE

JEDEC

―

JEITA

―

TOSHIBA

2-7B7B

Weight: 0.36 g (typ.)