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TPC8A02-H Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPC8A02-H
Description  竊큀SHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8A02-H Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPC8A02-H
2006-11-16
4
Gate-source voltage VGS (V)
ID – VGS
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
⎪Yfs⎪ − ID
Drain current ID (A)
RDS (ON) − ID
0.1
1
10
10
100
1
Common source
Ta
= 25°C
Pulse test
VGS = 4.5 V
100
Ta
= −55°C
25
100
Common source
VDS = 10 V
Pulse test
0
50
10
30
20
40
0
0.20
0.04
0.12
0.08
0.16
02
10
46
8
4
Common source
Ta
= 25°C
Pulse test
8
ID = 16 A
25
0.1
100
1
10
Common source
VDS = 10 V
Pulse test
Ta
= −55°C
100
0.1
100
10
1
10
Drain-source voltage VDS (V)
ID – VDS
Drain-source voltage VDS (V)
ID – VDS
0
20
4
12
8
16
0.2
0
1.0
0.4
0.6
0.8
Common source
Ta
= 25°C
Pulse test
VGS = 3 V
4.5
5
Common source
Ta
= 25°C
Pulse test
0
50
10
30
20
40
1
0
5
23
4
3.2
4
8
10
6
3.3
3.4
3.5
3.6
VGS = 3.2 V
3.4
3.5
3.6
3.7
3.8
3.9
4
4.5
10
5
6
1
0
5
2
3
4
6


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