TPCA8103

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)

TPCA8103

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

− 40

Drain current

Pulsed (Note 1)

−120

A

Drain power dissipation

(Tc=25°C)

45

W

Drain power dissipation

(t

= 10 s)

(Note 2a)

2.8

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.6

W

Single pulse avalanche energy

(Note 3)

208

mJ

Avalanche current

− 40

A

Repetitive avalanche energy

(Tc=25°C) (Note 4)

4.5

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

5.0±0.2

S

0.05 S

A

1.27

0.4±0.1

0.595

0.05 M A

1

4

5

8

0.15±0.05

0.8±0.1

4.25±0.2

1

4

5

8

1,2,3：SOURCE

4：GATE

5,6,7,8：DRAIN

JEDEC

―

JEITA

―

TOSHIBA

2-5Q1A

Weight: 0.076 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4