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TPC8107 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −6.5 A ⎯ 10 15 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −6.5 A ⎯ 5.5 7.0 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −6.5 A 15.5 31 ⎯ S Input capacitance Ciss ⎯ 5880 ⎯ Reverse transfer capacitance Crss ⎯ 1000 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1050 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-ON time ton ⎯ 22 ⎯ Fall time tf ⎯ 110 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs ⎯ 395 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 130 ⎯ Gate-source charge 1 Qgs1 ⎯ 10 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −24 V, VGS = −10 V, ID = −13 A ⎯ 30 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −52 A Forward voltage (diode) VDSF IDR = −13 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ∼− −15 V −10 V VGS 0 V ID = −6.5 A VOUT |
