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2SK3466 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3466 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3466 2010-04-06 5 10 μ 0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 3 30 μ 100 μ 300 μ 1 m 3 m 10 m 30 m 100 m 3 10 300 m 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse T PDM t Duty = t/T Rth (ch-c) =2.5°C/W rth − tw EAS – Tch −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 12.2 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS DC operation Tc = 25°C 1 ms * 100 μs * ID max (pulsed) * ID max (continuous) * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max 0.01 1 0.03 0.05 0.1 0.3 0.5 1 3 5 10 30 50 100 3 5 10 30 50 100 300 500 1000 25 40 120 200 50 75 150 100 125 80 160 0 Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area Channel temperature (initial) Tch (°C) |
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