2SK3371

2010-02-05

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

2SK3371

Switching Regulator Applications

Features

Characteristic

Symbol

Rating

Unit

Drain-source voltage

600

V

600

V

Gate-source voltage

±30

V

DC

(Note 1)

1

Drain current

Pulse (Note 1)

2

A

Drain power dissipation (Tc

= 25°C)

20

W

Single-pulse avalanche energy

(Note 2)

56

mJ

Avalanche current

1

A

Repetitive avalanche energy (Note 3)

2

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

6.25

°C/W

Thermal resistance, channel to ambient

125

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by max channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

1.1

± 0.2

1.05 MAX.

2.3

± 0.15

5.2

± 0.2

0.8 MAX.

0.6 MAX.

6.5

± 0.2

1

2

3

0.6 MAX.

0.6

± 0.15

2.3

± 0.15

3

2

1

1. GATE

2. DRAIN

（

HEAT SINK）

3. SOURSE

JEDEC

―

JEITA

―

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)