2SK2615 datasheet(2/6 Pages) TOSHIBA

Part #	2SK2615

Description	DC−DC Converter, Relay Drive and Motor Drive Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK2615

2009-09-29

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = 60 V, VGS = 0 V

—

100

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

—

2.0

V

VGS = 4 V, ID = 1 A

—

0.33

0.44

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 1 A

—

0.23

0.30

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 1 A

1.0

2.0

—

S

Input capacitance

Ciss

—

150

—

Reverse transfer capacitance

Crss

—

25

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

70

—

pF

Rise time

tr

—

25

—

Turn−on time

ton

—

30

—

Fall time

tf

—

50

—

Switching time

Turn−off time

toff

—

150

—

ns

Total gate charge (gate−source

plus gate−drain)

Qg

—

6.0

—

Gate−source charge

Qgs

—

4.6

—

Gate−drain (“miller”) Charge

Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 2 A

—

1.4

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

2

A

Pulse drain reverse current

(Note 1)

IDRP

—

6

A

Forward voltage (diode)

VDSF

IDR = 2 A, VGS = 0 V

—

−1.5

V

Reverse recovery time

trr

—

100

—

ns

Reverse recovery charge

Qrr

IDR = 2 A, VGS = 0 V

dIDR / dt = 50 A / μs

—

40

—

nC

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