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BR35H128F-WCTR Datasheet(PDF) 8 Page - Rohm |
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BR35H128F-WCTR Datasheet(HTML) 8 Page - Rohm |
8 / 17 page Technical Note 8/16 BR35H□□□-WC Series www.rohm.com 2011.03 - Rev.C © 2011 ROHM Co., Ltd. All rights reserved. With the write command data can be written to the EEPROM. As for this command, set CSB to LOW, then input address and data after inputting the write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W (Max 5ms). During tE/W, commands other than the status read command are not accepted. Start CSB after taking the last data (D0) and before the next SCK clock starts. At other timings the write command will not be executed and will be cancelled. The IC has page write functionality. After input 1 byte (8bits) of data, by continuing data input without starting CSB, data up to 32/64 *1 bytes can be written in one tE/W. In page write, the insignificant 5/6 *2 bit of the designated address is incremented internally every time 1 byte of data is input, and data is written to the respective addresses. When data larger then the maximum bytes is input the address rolls over and previously input data is overwritten. Write command is executed when CSB rises between the SCK clock rising edge to recognize the 8th bit’s of data input and the next SCK rising edge. At other timings the write command is not executed and cancelled (Fig.42 valid timing c). In page write, the CSB valid timing is every 8 bits. If CSB rises at other timings page write is cancelled together with the write command and the input data is reset. page0 000h 001h 002h ・・・ 01Eh 01Fh page 1 020h 021h 022h ・・・ 03Eh 03Fh page 2 040h 041h 042h ・・・ 05Eh 05Fh ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ page m-1 n-63 n-62 n-61 ・・・ n-33 n-32 page *4 m n-31 n-30 n-29 ・・・ n-1 *3 n ● Example of Page write command No. Addresses of Page0 000h 001h 002h ・・・・ 01Eh 01Fh ① Previous data 00h 01h 02h ・・・・ 1Eh 1Fh ② 2 bytes input data AAh 55h - ・・・・ - - ③ After No.② AAh 55h 02h ・・・・ 1Eh 1Fh ④ 34 byte input data AAh 55h AAh ・・・・ AAh 55h FFh 00h - ・・・・ - - ⑤ After No.④ FFh 00h AAh ・・・・ AAh 55h a:In case of input the data of No.② which is 2 bytes page write command for the data of No.①, EEPROM data changes like No.③. b:In case of input the data of No.④ which is 34 bytes page write command for the data of No.①, EEPROM data changes like No.⑤. c:In case of a or b, when write command is cancelled, EEPROM data keep No.①. In page write command, when data is set to the last address of a page (e.g. address “03Fh” of page 1), the next data will be set to the top address of the same page (e.g. address “020h” of page 1). This is why page write address increment is available in the same page. As a reference, if of 32 bytes, page write command is executed for 2 bytes the data of the other 30 bytes without addresses will not be changed. *1 BR35H160/320/640-WC = Max 32 Bytes BR35H128-WC = Max 64 Bytes *2 BR35H160/320/640-WC = Lower 5 bits BR35H128-WC = Lower 6 bits 32byte *3 n=8191d=1FFFh: BR35H640-WC n=4095d=FFFh:BR35H320-WC n=2047d=7FFh:BR35H160-WC *4 m=255 : BR35H640-WC m=127:BR35H320-WC m=63:BR35H160-WC Fig.37 EEPROM physical address for Page write command (32/64Byte) page 0 0000h 0001h 0002h ・・・ 003Eh 003Fh page 1 0040h 0041h 0042h ・・・ 007Eh 007Fh page 2 0080h 0081h 0082h ・・・ 00BEh 00BFh ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ page m-1 n-127 n-126 n-125 ・・・ n-65 n-64 page *6 m n-63 n-62 n-61 ・・・ n-1 *5 n 64byte *5 n=16383d=3FFFh:BR35H128-WC *6 m=255:BR35H128-WC This column addresses are Top address of this page This column addresses are Top address of this page This column addresses are the last address of this page This column addresses are the last address of this page |
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