ZXT10N15DE6TC datasheet(4/6 Pages) ZETEX

Part #	ZXT10N15DE6TC

Description	15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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ISSUE 1 - SEPTEMBER 2000

ZXT10N15DE6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

15

70

V

IC=100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

15

18

V

IC=10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

5

8.2

V

IE=100 A

Collector Cut-Off Current

ICBO

100

nA

VCB=10V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector Emitter Cut-Off Current

ICES

100

nA

VCES=10V

Collector-Emitter Saturation

Voltage

VCE(sat)

8

70

165

230

14

100

200

260

mV

IC=0.1A, IB=10mA*

IC=1A, IB=10mA*

IC=3A, IB=50mA*

IC=4A, IB=50mA*

Base-Emitter Saturation Voltage

VBE(sat)

0.94

1.0

V

IC=4A, IB=50mA*

Base-Emitter Turn-On Voltage

VBE(on)

0.87

0.95

V

IC=4A, VCE=2V*

Static Forward Current Transfer

Ratio

hFE

200

300

200

150

415

450

320

240

80

IC=10mA, VCE=2V*

IC=0.2A, VCE=2V*

IC=3A, VCE=2V*

IC=5A, VCE=2V*

IC=12A, VCE=2V*

Transition Frequency

fT

80

120

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

30

40

pF

VCB=10V, f=1MHz

Turn-On Time

t(on)

120

ns

VCC=10V, IC=3A

IB1=IB2=50mA

Turn-Off Time

t(off)

160

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

4

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