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M470T2863EH3 Datasheet(PDF) 10 Page - Samsung semiconductor |
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M470T2863EH3 Datasheet(HTML) 10 Page - Samsung semiconductor |
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10 / 14 page  - 10 - Product Guide DDR2 SDRAM Memory Apr. 2010 240Pin DDR2 Fully Buffered DIMM(1.55V) Org. Density Part Number Speed AMB Composition Comp. Version Internal Banks Rank PKG Height Avail. 128Mx 72 1GB M395T2863QZ(H)4 YE6 8: IDT L4 64M x 8 * 18pcs 1Gb Q-die 8 1 60 ball FBGA 30.35mm Now 256Mx 72 2GB M395T5663QZ(H)4 YE6 8: IDT L4 128M x 8 * 18pcs 1Gb Q-die 8 2 60 ball FBGA 30.35mm Now 512Mx 72 4GB M395T5160QZ(H)4 YE6 8: IDT L4 256M x 4 * 36pcs 1Gb Q-die 8 260 ball FBGA 30.35mm Now M395T5163QZ(H)4 YE6 8: IDT L4 128M x 8 * 36pcs 4 M395T5263AZ(H)4 YE6 8: IDT L4 256M x 8 * 18pcs 2Gb A-die 2 68 ball FBGA 1Gx 72 8GB M395T1K66AZ(H)4 YE6 8: IDT L4 st.1G x 4 * 18pcs 2Gb A-die 8 2 83 ball FBGA 30.35mm Now |
Similar Part No. - M470T2863EH3 |
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Similar Description - M470T2863EH3 |
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