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RB520S30 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # RB520S30
Description  200 mA low VF MEGA Schottky barrier rectifier
Download  12 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

RB520S30 Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small
and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 0.2 A
I Reverse voltage: VR ≤ 30 V
I Low reverse current: IR ≤ 1 µA
I AEC-Q101 qualified
I Ultra small and flat lead SMD plastic package
1.3 Applications
I Low current rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for
cathode 1 cm2.
[2]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
RB520S30
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01 — 6 October 2009
Product data sheet
Table 1.
Quick reference data
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward current
square wave;
δ = 0.5;
f=20kHz
Tamb ≤ 105 °C
[1] -
-
0.2
A
Tsp ≤ 135 °C
-
-
0.2
A
IR
reverse current
VR = 10 V
--1
µA
VR
reverse voltage
-
-
30
V
VF
forward voltage
IF = 0.2 A
[2] -
520
600
mV


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