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PSMN102-200Y Datasheet(PDF) 1 Page - NXP Semiconductors |
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PSMN102-200Y Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information PSMN102-200Y N-channel TrenchMOS standard level FET Rev. 01 — 29 April 2008 Product data sheet I Low body Qr I Fast switching I Industrial DC motor control I Class D audio I DC-to-DC converters I Switched-mode power supplies I VDS ≤ 200 V I ID ≤ 21.5 A I RDSon ≤ 102 mΩ I QGD = 10.1 nC (typ) Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) SOT669 (LFPAK) 4 gate (G) mb mounting base; connected to drain (D) mb 1234 S D G mbb076 |
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