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PSMN039-100YS Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN039-100YS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page PSMN039-100YS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 April 2010 8 of 15 NXP Semiconductors PSMN039-100YS N-channel LFPAK 100 V 39.5 m Ω standard level MOSFET Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aae100 20 40 60 80 100 4 8 12 16 20 V GS(V) R DSon (m Ω) Tj (°C) −60 180 120 060 003aad280 2 3 1 4 5 VGS(th) (V) 0 max typ min 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 003aad774 0 0.8 1.6 2.4 3.2 -60 0 60 120 180 Tj (°C) a |
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