PSMN035-150B datasheet(6/12 Pages) NXP

Part #	PSMN035-150B

Description	N-channel TrenchMOS SiliconMAX standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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PSMN035-150B_4

Product data sheet

Rev. 04 — 17 November 2009

6 of 12

NXP Semiconductors

PSMN035-150B

N-channel TrenchMOS SiliconMAX standard level FET

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Sub-threshold drain current as a function of

gate-source voltage

Fig 9.

Forward transconductance as a function of

drain current; typical values

003aaa019

VDS (V)

0

0.4

0.8

1.2

1.6

2

ID

(A)

0

10

20

30

40

50

8 V

5.4 V

5.2 V

5 V

4.8 V

4.6 V

4.4 V

VGS = 10 V

6 V

VGS (V)

ID

(A)

0

10

20

30

40

50

VDS > ID × RDSon

175

°C

Tj = 25 °C

10

4

26

8

0

003aaa020

003aaa024

1

2

3

4

5

max

typ

min

ID

(A)

VGS (V)

10−7

10−6

10−5

10−4

10−3

10−2

gfs

(S)

ID (A)

20

10

30

40

50

0

20

30

40

50

10

Tj = 25 °C

Tj = 175 °C

003aaa025

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