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PSMN016-100YS Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN016-100YS Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page PSMN016-100YS_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 30 March 2010 2 of 15 NXP Semiconductors PSMN016-100YS N-channel 100 V 16.3 m Ω standard level MOSFET in LFPAK 2. Pinning information 3. Ordering information Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =15 A; Tj = 100 °C; see Figure 12 - - 29.3 m Ω VGS =10V; ID =15 A; Tj = 25 °C; see Figure 13 - 12.7 16.3 m Ω Table 1. Quick reference …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source SOT669 (LFPAK) 2S source 3S source 4G gate mb D mounting base; connected to drain mb 1234 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version PSMN016-100YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 |
Similar Part No. - PSMN016-100YS_10 |
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Similar Description - PSMN016-100YS_10 |
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