PSMN011-80YS

N-channel LFPAK 80 V 11 m

Ω standard level MOSFET

Rev. 01 — 26 February 2010

Objective data sheet

1.

Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

RDSon and low gate charge

High efficiency gains in switching

power converters

Improved mechanical and thermal

characteristics

LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

80

V

drain current

see Figure 1

--67

A

total power

dissipation

--117

W

junction temperature

-55

-

175

°C

Avalanche ruggedness

drain-source

avalanche energy

-

-

121

mJ

Dynamic characteristics

gate-drain charge

see Figure 14 and 15

-11

-

nC

total gate charge

-

45

-

nC