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TPC6113 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC6113 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page  TPC6113 2009-12-26 4 −10 −8 −10 −4 −5 −1.6 −2 VGS = −2.5 V −4.5 10 1000 −0.1 −1 1 −2.5 ID = −5 A −1.25 0 −2 −4 −6 0 −0.1 −0.2 −0.3 −0.4 −55°C Ta = 100°C 25 −0.5 −1 −2 −2.5 0 −2.5 −5 −7.5 −10 0 0 −1 −2 −3 0 −2 −4 −6 −8 −10 −2.5 −1.5 −2.4 −1.7 −1.9 VGS = −1.4 V −1.7 −1.6 −1.9 −4.5 −1.5 0 −0.4 −0.8 −1.2 0 −1 −2 −3 −4 −5 −2 VGS = −1.4 V −1.8 −2.5 −1.6 −1.8 −2.2 −2 −4.5 −1.5 −0.5 100 ID – VDS ID – VDS ID – VGS VDS – VGS RDS (ON) – ID Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain-source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) |
Similar Part No. - TPC6113 |
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Similar Description - TPC6113 |
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