PSMN009-100P datasheet(6/13 Pages) NXP

Part #	PSMN009-100P

Description	N-channel TrenchMOS SiliconMAX standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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6 / 13 page

PSMN009-100P_2

Product data sheet

Rev. 02 — 30 September 2009

6 of 13

NXP Semiconductors

PSMN009-100P

N-channel TrenchMOS SiliconMAX standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj =-55 °C

90

-

V

ID =0.25mA; VGS =0V; Tj =25°C

100

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS; Tj = 175 °C;

see Figure 8

1-

-

V

ID =1mA; VDS = VGS; Tj =25°C;

see Figure 8

234

V

ID =1mA; VDS = VGS; Tj =-55 °C;

see Figure 8

--4.4

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 175 °C

-

500

µA

VDS =30V; VGS =0V; Tj = 25 °C

-

0.02

1

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

10

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

10

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A; Tj = 175 °C;

see Figure 9; see Figure 10

-

20.25

23.8

m

Ω

VGS =10V; ID =25A; Tj =25°C;

see Figure 9; see Figure 10

-7.5

8.8

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =75A; VDS =80V; VGS =10V;

Tj =25°C; see Figure 11

-

156

-

nC

QGS

gate-source charge

-

31

-

nC

QGD

gate-drain charge

-

44

-

nC

Ciss

input capacitance

VDS =25V; VGS = 0 V; f = 1 MHz;

Tj =25°C; see Figure 12

-

8250

-

pF

Coss

output capacitance

-

620

-

pF

Crss

reverse transfer

capacitance

-

300

-

pF

td(on)

turn-on delay time

VDS =15V; RL =1.25 Ω; VGS =10 V;

RG(ext) =6 Ω; Tj =25 °C; ID =12A

-38

-

ns

tr

rise time

-

59

-

ns

td(off)

turn-off delay time

-

120

-

ns

tf

fall time

-

43

-

ns

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 13

-0.8

1.2

V

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