PSMN7R0-100PS_2

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Product data sheet

Rev. 02 — 7 January 2010

7 of 16

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 m

Ω standard level MOSFET in TO220

turn-on delay time

-

34.6

-

ns

rise time

-

45.6

-

ns

turn-off delay time

-

103.9

-

ns

fall time

-

49.5

-

ns

Source-drain diode

source-drain voltage

see Figure 16

-0.8

1.2

V

reverse recovery time

-64

-

ns

recovered charge

-

167

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003a a d562

0

60

120

180

240

300

01

23

4

(A)

6

10

5

4.5

5.5

20

003a a d566

2000

4000

6000

8000

10000

12000

0

5

10

15

20

C

(pF)