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TK4P55DA Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TK4P55DA Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TK4P55DA 2009-08-07 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 550 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 550 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.8 A ⎯ 2.0 2.45 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.8 A 0.4 1.8 ⎯ S Input capacitance Ciss ⎯ 380 ⎯ Reverse transfer capacitance Crss ⎯ 2.5 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 45 ⎯ pF Rise time tr ⎯ 15 ⎯ Turn-on time ton ⎯ 35 ⎯ Fall time tf ⎯ 7 ⎯ Switching time Turn-off time toff ⎯ 55 ⎯ ns Total gate charge Qg ⎯ 9 ⎯ Gate-source charge Qgs ⎯ 5 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 3.5 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3.5 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 14 A Forward voltage (diode) VDSF IDR = 3.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 800 ⎯ ns Reverse recovery charge Qrr IDR = 3.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 4.4 ⎯ μC Marking(Note 4) Note 4: RL = 111 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 1.8 A VOUT 50 Ω Duty ≤ 1%, tw = 10 μs TK4P55DA Lot No. Part No. (or abbreviation code) * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) |
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