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TK4P55DA Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # TK4P55DA
Description  Switching Regulator Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TK4P55DA Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TK4P55DA
2009-08-07
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P55DA
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
550
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
121
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Note 1:Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 17.1 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
5.34
± 0.13
2.29
1
3
6.6
± 0.2
2
0.76
± 0.12
1.14MAX
0.58MAX
1. GATE
2. DRAIN
HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight: 0.36 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
1
3
2
Internal Connection


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