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TK4P55DA Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TK4P55DA Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TK4P55DA 2009-08-07 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P55DA Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 3.5 Drain current Pulse (t = 1 ms) (Note 1) IDP 14 A Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAS 121 mJ Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Note 1:Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 17.1 mH, RG = 25 Ω, IAR = 3.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 5.34 ± 0.13 2.29 1 3 6.6 ± 0.2 2 0.76 ± 0.12 1.14MAX 0.58MAX 1. GATE 2. DRAIN ( HEAT SINK) 3. SOURCE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7K1A Weight: 0.36 g (typ.) Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W 1 3 2 Internal Connection |
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