P-CHANNEL

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

-20

V

Zero Gate Voltage Drain Current

-1

µA

Gate-Body Leakage

±100

nA

Gate-Source Threshold Voltage

-0.7

V

Static Drain-Source On-State Resistance

(1)

0.27

0.40

Ω

Ω

Forward Transconductance (3)

1.3

S

DYNAMIC (3)

Input Capacitance

290

pF

f=1MHz

Output Capacitance

120

pF

Reverse Transfer Capacitance

50

pF

SWITCHING(2) (3)

Turn-On Delay Time

3.4

ns

(Refer to test

circuit)

Rise Time

9.6

ns

Turn-Off Delay Time

16.4

ns

Fall Time

20.4

ns

Total Gate Charge

5.25

nC

(Refer to test

circuit)

Gate-Source Charge

1.0

nC

Gate Drain Charge

2.25

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

-0.95

V

Reverse Recovery Time (3)

21.7

ns

di/dt= 100A/

µs

Reverse Recovery Charge(3)

9.6

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ZXMD63C02X

8

PROVISIONAL ISSUE A - JUNE 1999