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ZXM66P02N8TA Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZXM66P02N8TA Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 4 page PROVISIONAL ISSUE A - MAY 2001 ZXM66P02N8 3 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNI T CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -20 V I D=-250µA, VGS=0V Zero Gate Voltage Drain Current I DSS -1 µA V DS=-16V, VGS=0V Gate-Body Leakage I GSS -100 nA V GS=±12V, VDS=0V Gate-Source Threshold Voltage V GS(th) -0.7 V I D =-250 µA, V DS=VGS Static Drain-Source On-State Resistance (1) R DS(on) 0.025 0.045 Ω Ω V GS=-4.5V, ID=-3.2A V GS=-2.5V, ID=-2.7A Forward Transconductance (1)(3) g fs 13.3 S V DS=-10V,ID=-3.2A DYNAMIC (3) Input Capacitance C iss 2068 pF V DS=-15 V, VGS=0V, f=1MHz Output Capacitance C oss 1038 pF Reverse Transfer Capacitance C rss 506 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 14.0 ns V DD =-10V, ID=-3.2A R G=6.0Ω,VGS=-5V Rise Time t r 44.3 ns Turn-Off Delay Time t d(off) 118.4 ns Fall Time t f 98.4 ns Total Gate Charge Q g 43.3 - nC V DS=-10V,VGS=-4.5V ID=-3.2A Gate-Source Charge Q gs 3.5 - nC Gate Drain Charge Q gd 21.3 - nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T j=25°C, IS=-3.2A, V GS=0V Reverse Recovery Time (3) t rr 23.1 ns T j=25°C, IF=-3.2A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 12.2 nC (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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