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PMATA06 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMATA06 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1999 Apr 29 3 NXP Semiconductors Product data sheet NPN general purpose transistors PMSTA05; PMSTA06 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current PMSTA05 IE = 0; VCB = 60 V − 100 nA PMSTA06 IE = 0; VCB = 80 V − 100 nA IEBO emitter cut-off current IC = 0; VEB = 3 V − 500 nA hFE DC current gain IC = 10 mA; VCE = 2 V 50 − IC = 100 mA; VCE = 1 V; note 1 50 − VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 250 mV VBEsat base-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 900 mV VBE base-emitter voltage IC = 100 mA; VCE = 1 V − 1.2 V fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − MHz |
Similar Part No. - PMATA06 |
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Similar Description - PMATA06 |
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