PMST3906 datasheet(4/10 Pages) NXP

Part #	PMST3906

Description	40 V, 200 mA PNP switching transistor

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Manufacturer	NXP [NXP Semiconductors]

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4 / 10 page

PMST3906_5

Product data sheet

Rev. 05 — 29 April 2009

4 of 10

NXP Semiconductors

PMST3906

40 V, 200 mA PNP switching transistor

VCE = −1V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector current as a function of

collector-emitter voltage; typical values

VCE = −1V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 3.

Base-emitter voltage as a function of collector

current; typical values

Fig 4.

Base-emitter saturation voltage as a function

of collector current; typical values

0

400

600

200

mhc459

−10−1

−1

−10

IC (mA)

hFE

−102

−103

(1)

(3)

(2)

0

−10

−250

0

−50

−100

−150

−200

−2

VCE (V)

IC

(mA)

−4

−6

−8

006aab475

IB (mA) = −1.5

−0.15

−0.30

−0.60

−0.45

−0.75

−0.90

−1.05

−1.20

−1.35

mhc461

−600

−800

−400

−1000

−1200

VBE

(mV)

−200

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

mhc462

−600

−800

−400

−1000

−1200

VBEsat

(mV)

−200

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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