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MP3V5004G Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc

Part # MP3V5004G
Description  Integrated Silicon Pressure Sensor, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MP3V5004G Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc

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MP3V5004G
Sensors
4
Freescale Semiconductor
Pressure
On-chip Temperature Compensation and Calibration
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the gauge configuration in the basic
chip carrier (Case 482A). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
The MP3V5004G series sensor operating characteristics
are based on the use of dry air as pressure media. Media,
other than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the MP3V5004G to the A/D input of
the microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 shows the sensor output signal relative to
pressure input. Typical, minimum and maximum output
curves are shown for operation over a temperature range of
10
°C to 60°C using the decoupling circuit shown in Figure 3
The output will saturate outside of the specified pressure
range.
Figure 2. Cross Sectional Diagram SSOP (not to scale)
Figure 3. Recommended Power Supply Decoupling and
Output Filtering.
(For additional output filtering, please refer to Application
Note AN1646.)
Figure 4. Output vs. Pressure Differential at ±2.5% VFSS
(See Note 5 in Operating Characteristics table)
+3 V
1.0 μF
0.01 μF
470 pF
GND
Vs
Vout
IPS
OUTPUT
Fluorosilicone
Gel Die Coat
Differential Sensing
Element
Stainless
Steel Cap
P1
P2
Die Bond
Die
Thermoplas-
tic
Lead
Frame
Wire
Bond
3.0
1.0
2.0
0.6
Max
Min
Typical
2 kPa
200 mm H2O
4 kPa
400 mm H2O
TRANSFER FUNCTION:
Vout = VS*[(0.2*P) + 0.2] ± 2.5% VFSS
VS = 3.0 V ± 0.30 Vdc
TEMP = 10 to 60°C


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