PMBT3906VS datasheet(4/11 Pages) NXP

Part #	PMBT3906VS

Description	40 V, 200 mA PNP/PNP switching transistor

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Manufacturer	NXP [NXP Semiconductors]

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PMBT3906VS_1

Product data sheet

Rev. 01 — 20 August 2009

4 of 11

NXP Semiconductors

PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

7.

Characteristics

FR4 PCB, standard footprint

Fig 2.

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab605

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −30 V; IE =0A

-

−50

nA

IEBO

emitter-base cut-off

current

VEB = −6 V; IC =0A

-

−50

nA

hFE

DC current gain

VCE = −1V

IC = −0.1 mA

60

180

-

IC = −1 mA

80

180

-

IC = −10 mA

100

180

300

IC = −50 mA

60

130

-

IC = −100 mA

30

50

-

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −1mA

-

−100

−250

mV

IC = −50 mA; IB = −5mA

-

−165

−400

mV

VBEsat

base-emitter

saturation voltage

IC = −10 mA; IB = −1mA

-

−750

−850

mV

IC = −50 mA; IB = −5mA

-

−850

−950

mV

td

delay time

VCC = −3V;

IC = −10 mA;

IBon = −1 mA;

IBoff =1mA

--35

ns

tr

rise time

-

35

ns

ton

turn-on time

-

70

ns

ts

storage time

-

225

ns

tf

fall time

-

75

ns

toff

turn-off time

-

300

ns

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