PMBT3906VS_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 20 August 2009

3 of 11

NXP Semiconductors

PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

FR4 PCB, standard footprint

Fig 1.

Per device: Power derating curves SOT666

Table 6.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

−75

175

125

25

75

−25

006aab604

200

100

300

400

(mW)

0

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

in free air

[1][2] -

-

521

K/W

thermal resistance from

junction to solder point

-

-

100

K/W

Per device

thermal resistance from

junction to ambient

in free air

[1][2] -

-

347

K/W