ISSUE 1 - MARCH 2001

ZVP4525Z

4

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-250

-285

V

I

Zero Gate Voltage Drain Current

I

DSS

-30

-500

nA

V

Gate-Body Leakage

I

GSS

±1

±100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

-0.8

-1.5

-2.0

V

I

D

=-1mA, V

Static Drain-Source On-State Resistance (1)

R

DS(on)

10

13

14

18

Ω

Ω

V

V

Forward Transconductance (3)

g

fs

80

200

mS

V

DYNAMIC (3)

Input Capacitance

C

iss

73

pF

V

f=1MHz

Output Capacitance

C

oss

12.8

pF

Reverse Transfer Capacitance

C

rss

3.91

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

1.53

ns

V

R

(refer to test circuit)

Rise Time

t

r

3.78

ns

Turn-Off Delay Time

t

d(off)

17.5

ns

Fall Time

t

f

7.85

ns

Total Gate Charge

Q

g

2.45

3.45

nC

V

test circuit)

Gate-Source Charge

Q

gs

0.22

0.31

nC

Gate Drain Charge

Q

gd

0.45

0.63

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.97

V

T

V

Reverse Recovery Time (3)

t

rr

205

290

ns

T

di/dt=100A/

µs

Reverse Recovery Charge (3)

Q

rr

21

29

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.