PHP33NQ20T

N-channel TrenchMOS standard level FET

Rev. 02 — 3 February 2009

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

thermal resistance

Low conduction losses due to low

on-state resistance

Simple gate drive required due to low

gate charge

Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

DC-to-DC convertors switching

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

200

V

drain current

see Figure 1; see Figure 3

-

-

32.7

A

total power

dissipation

-

-

230

W

Dynamic characteristics

gate-drain charge

see Figure 11

-9.6

-nC

Static characteristics

drain-source

on-state resistance

see Figure 10

-

6577m

Ω