PHE13005_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 20 November 2009

2 of 12

NXP Semiconductors

PHE13005

Silicon diffused power transistor

2.

Ordering information

3.

Limiting values

Table 2.

Ordering information

Type number

Package

Name

Description

Version

PHE13005

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB

SOT78

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-emitter peak

voltage

-

700

V

collector-base voltage

-

700

V

collector-emitter

voltage

-

400

V

collector current

DC; see Figure 3, 1 and 2

-4

A

peak collector current

-

8

A

base current

-2

A

peak base current

-

4

A

total power dissipation

-75

W

storage temperature

-65

150

°C

junction temperature

-

150

°C

Fig 1.

Test circuit for reverse bias safe operating area

Fig 2.

Reverse bias safe operating area

001aab999

DUT

probe point

0

800

600

200

400

003aad544

4

2

6

8

(A)

0