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PHB47NQ10T Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHB47NQ10T Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page PHB47NQ10T_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 25 February 2010 7 of 13 NXP Semiconductors PHB47NQ10T N-channel TrenchMOS standard level FET Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 13. Gate-source voltage as a function of gate charge; typical values 2.5 −60 −20 20 1 0.5 0 1.5 2 60 100 140 180 3.5 VGS(th) (V) Tj (°C) 3 4 4.5 max typ min 003aaa023 VGS = 5.5 V 6.0 V 6.5 V 7.0 V 7.5 V 10 V 8.0 V 60 55 50 45 40 35 30 25 20 15 5 25 45 65 85 105 125 ID (A) 65 RDSon (m Ω) 003aaa102 -20 20 60 100 −60 140 180 Tj (°C) 1.0 2.0 0 a 1.2 1.4 1.6 1.8 0.8 0.6 0.4 0.2 003aaa103 0 2 4 6 8 10 0 102030 40506070 VGS (V) QG (nC) VDD = 20 V VDD = 80 V 003aaa107 |
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