PHB47NQ10T_2

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Product data sheet

Rev. 02 — 25 February 2010

7 of 13

NXP Semiconductors

PHB47NQ10T

N-channel TrenchMOS standard level FET

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Drain-source on-state resistance as a function

of drain current; typical values

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 13. Gate-source voltage as a function of gate

charge; typical values

2.5

−60

−20

20

1

0.5

0

1.5

2

60

100

140

180

3.5

(V)

3

4

4.5

max

typ

min

003aaa023

6.0 V

6.5 V

7.0 V

7.5 V

10 V

8.0 V

60

55

50

45

40

35

30

25

20

15

5

25

45

65

85

105

125

65

(m

Ω)

003aaa102

-20

20

60

100

−60

140

180

1.0

2.0

0

a

1.2

1.4

1.6

1.8

0.8

0.6

0.4

0.2

003aaa103

0

2

4

6

8

10

0

102030

40506070

(V)

003aaa107