PH3830L

N-channel TrenchMOS logic level FET

Rev. 04 — 17 November 2009

Product data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

thermal resistance

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

1.3 Applications

DC-to-DC convertors

Notebook computers

Portable equipment

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

30

V

drain current

see Figure 1 and 3

--98

A

total power

dissipation

-

-

62.5

W

Dynamic characteristics

gate-drain charge

see Figure 12

-11

-

nC

Static characteristics

drain-source

on-state resistance

-3.2

3.8

m

Ω