PH1825AL

N-channel TrenchMOS logic level FET

Rev. 01 — 22 April 2009

Product data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

100% gate resistance tested

100% Ruggedness tested

Lead-free package

Logic level compatible

Optimimzed for use in DC-to-DC

converters

Very low switching and conduction

losses

1.3 Applications

DC-to-DC converters

Notebook computers

Switched-mode power supplies

Voltage regulators

1.4 Quick reference data

[1]

Continuous current is limited by package.

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

25

V

drain current

see Figure 1; see Figure 3

[1]

-

-

100

A

Dynamic characteristics

gate-drain charge

see Figure 13

-8

-nC

Static characteristics

drain-source

on-state resistance

see Figure 11

-1.4

1.8

m

Ω