PESD12VS4UD datasheet(6/12 Pages) NXP

Part #	PESD12VS4UD

Description	Quadruple ESD protection diode arrays in a SOT457 package

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Manufacturer	NXP [NXP Semiconductors]

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PESDXS4UD_SER_2

Product data sheet

Rev. 02 — 21 August 2009

6 of 12

NXP Semiconductors

PESDxS4UD series

Quadruple ESD protection diode arrays in a SOT457 package

f = 1 MHz; Tamb =25 °C

(1) PESD3V3S4UD

(2) PESD5V0S4UD

f = 1 MHz; Tamb =25 °C

(1) PESD12VS4UD

(2) PESD15VS4UD

(3) PESD24VS4UD

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Diode capacitance as a function of reverse

voltage; typical values

PESD3V3S4UD

PESD5V0S4UD

IR is less than 5 nA at 150 °C

PESD12VS4UD

PESD15VS4UD

PESD24VS4UD

Fig 7.

Relative variation of reverse leakage current

as a function of junction temperature; typical

values

Fig 8.

V-I characteristics for a unidirectional ESD

protection diode

VR (V)

05

4

23

1

006aaa700

140

100

180

220

Cd

(pF)

60

(1)

(2)

VR (V)

025

20

10

15

5

006aaa701

40

20

60

80

Cd

(pF)

0

(1)

(2)

(3)

006aaa699

1

10

10−1

Tj (°C)

−100

150

100

050

−50

IRM

IRM(25°C)

006aaa407

−VCL −VBR −VRWM

−IRM

−IR

−IPP

V

I

P-N

−

+

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