PESDXL1BA_SER_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 20 August 2009

3 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform; see Figure 1.

[1]

Device stressed with ten non-repetitive ESD pulses; see Figure 2.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak pulse power

8/20

µs

[1]

PESD3V3L1BA

-

500

W

PESD5V0L1BA

-

500

W

PESD12VL1BA

-

200

W

PESD15VL1BA

-

200

W

PESD24VL1BA

-

200

W

peak pulse current

8/20

µs

[1]

PESD3V3L1BA

-

18

A

PESD5V0L1BA

-

15

A

PESD12VL1BA

-

5

A

PESD15VL1BA

-

5

A

PESD24VL1BA

-

3

A

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

ESD

electrostatic discharge capability

IEC 61000-4-2

(contact discharge)

[1]

PESD3V3L1BA

-

30

kV

PESD5V0L1BA

-

30

kV

PESD12VL1BA

-

30

kV

PESD15VL1BA

-

30

kV

PESD24VL1BA

-

23

kV

PESDxL1BA series

HBM MIL-Std 883

-

10

kV

Table 7.

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD); Figure 2

> 15 kV (air); > 8 kV (contact)

HBM MIL-Std 883; class 3

> 4 kV