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PESD5Z6.0 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD5Z6.0 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 17 page PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 4 April 2008 3 of 17 NXP Semiconductors PESD5Zx series Low capacitance unidirectional ESD protection diodes 4. Marking 5. Limiting values [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2. Table 5. Marking codes Type number Marking code PESD5Z2.5 N7 PESD5Z3.3 N8 PESD5Z5.0 N9 PESD5Z6.0 NA PESD5Z7.0 NB PESD5Z12 NC Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode PPP peak pulse power tp = 8/20 µs [1][2] PESD5Z2.5 - 260 W PESD5Z3.3 - 260 W PESD5Z5.0 - 180 W PESD5Z6.0 - 180 W PESD5Z7.0 - 180 W PESD5Z12 - 200 W IPP peak pulse current tp = 8/20 µs [1][2] PESD5Z2.5 - 20 A PESD5Z3.3 - 20 A PESD5Z5.0 - 10 A PESD5Z6.0 - 10 A PESD5Z7.0 - 10 A PESD5Z12 - 6 A Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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