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ZVN4206A Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZVN4206A Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JUNE 94 FEATURES * 60 Volt V DS *R DS(on) =1 Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C I D 600 mA Pulsed Drain Current I DM 8A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 0.7 W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 V I D=1mA, VGS=0V Gate-Source Threshold Voltage V GS(th) 1.3 3 V ID=1mA, V DS=VGS Gate-Body Leakage I GSS 100 nA V GS=± 20V, VDS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=60V, VGS=0 V DS=48V, VGS=0V, T=125°C(2) On-State Drain Current(1) I D(on) 3A V DS=25V, VGS=10V Static Drain-Source On-State Resistance (1) R DS(on) 1 1.5 Ω Ω V GS=10V,ID=1.5A V GS=5V,ID=500mA Forward Transconductance(1)(2 ) g fs 300 mS V DS=25V,ID=1.5A Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 60 pF V DS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) C rss 20 pF Turn-On Delay Time (2)(3) t d(on) 8ns V DD ≈25V, I D=1.5A Rise Time (2)(3) t r 12 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) t f 15 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator ZVN4206A D G S E-LINE TO92 COMPATIBLE |
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