PDTC115EM datasheet(2/14 Pages) NXP

Part #	PDTC115EM

Description	NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 14 page

2004 Aug 06

2

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTC115E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VCEO

collector-emitter

voltage

−

50

V

IO

output current (DC)

−

20

mA

R1

bias resistor

100

−

k

Ω

R2

bias resistor

100

−

k

Ω

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC115EE

SOT416

SC-75

46

PDTA115EE

PDTC115EEF

SOT490

SC-89

49

PDTA115EEF

PDTC115EK

SOT346

SC-59

56

PDTA115EK

PDTC115EM

SOT883

SC-101

DV

PDTA115EM

PDTC115ES

SOT54 (TO-92)

SC-43

TC115E

PDTA115ES

PDTC115ET

SOT23

−

*44(1)

PDTA115ET

PDTC115EU

SOT323

SC-70

*15(1)

PDTA115EU

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PDTC115EM Datasheet(PDF) 2 Page - NXP Semiconductors

PDTC115EM Datasheet(HTML) 2 Page - NXP Semiconductors

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