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PDTC123EEF Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTC123EEF Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page 2004 Aug 06 5 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 2.2 kΩ PDTC123E series THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 833 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 A − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 2 mA hFE DC current gain VCE = 5 V; IC = 20 mA 30 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV Vi(off) input-off voltage IC = 1 mA; VCE = 5 V − 1.2 0.5 V Vi(on) input-on voltage IC = 20 mA; VCE = 0.3 V 2 1.6 − V R1 input resistor 1.54 2.2 2.86 k Ω resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − − 2.5 pF R2 R1 -------- |
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