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PDTC123EEF Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PDTC123EEF
Description  NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTC123EEF Datasheet(HTML) 5 Page - NXP Semiconductors

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2004 Aug 06
5
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 k
Ω, R2 = 2.2 kΩ
PDTC123E series
THERMAL CHARACTERISTICS
Notes
1.
Refer to standard mounting conditions.
2.
Reflow soldering is the only recommended soldering method.
3.
Refer to SOT883 standard mounting conditions; FR4 with 60
μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
833
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 50 V; IE = 0 A
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0 A
1
μA
VCE = 30 V; IB = 0 A; Tj = 150 °C
50
μA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
2
mA
hFE
DC current gain
VCE = 5 V; IC = 20 mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input-off voltage
IC = 1 mA; VCE = 5 V
1.2
0.5
V
Vi(on)
input-on voltage
IC = 20 mA; VCE = 0.3 V
2
1.6
V
R1
input resistor
1.54
2.2
2.86
k
Ω
resistor ratio
0.8
1
1.2
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
2.5
pF
R2
R1
--------


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