2004 Aug 05

4

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistor;

R1 = 10 k

Ω, R2 = 10 kΩ

PDTC114E series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Refer to standard mounting conditions.

2.

Reflow soldering is the only recommended soldering method.

3.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

THERMAL CHARACTERISTICS

Notes

1.

Refer to standard mounting conditions.

2.

Reflow soldering is the only recommended soldering method.

3.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

10

V

input voltage

positive

−

+40

V

negative

−

−10

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

SOT54

note 1

−

500

mW

SOT23

note 1

−

250

mW

SOT346

note 1

−

250

mW

SOT323

note 1

−

200

mW

SOT416

note 1

−

150

mW

SOT490

notes 1 and 2

−

250

mW

SOT883

notes 2 and 3

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

SOT54

note 1

250

K/W

SOT23

note 1

500

K/W

SOT346

note 1

500

K/W

SOT323

note 1

625

K/W

SOT416

note 1

833

K/W

SOT490

notes 1 and 2

500

K/W

SOT883

notes 2 and 3

500

K/W