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PDTA143XS Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTA143XS Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 5 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −50 V; IE =0A - - −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB =0A - - −1 µA VCE = −30 V; IB =0A; Tj = 150 °C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −600 µA hFE DC current gain VCE = −5 V; IC = −10 mA 50 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA -- −150 mV VI(off) off-state input voltage VCE = −5 V; IC = −100 µA- −0.9 −0.3 V VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −2.5 −1.5 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 k Ω R2/R1 bias resistor ratio 1.7 2.1 2.6 Cc collector capacitance VCB = −10 V; IE =ie =0A; f = 1 MHz -- 3 pF |
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