Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

PDTA123T Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PDTA123T
Description  PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTA123T Datasheet(HTML) 4 Page - NXP Semiconductors

  PDTA123T Datasheet HTML 1Page - NXP Semiconductors PDTA123T Datasheet HTML 2Page - NXP Semiconductors PDTA123T Datasheet HTML 3Page - NXP Semiconductors PDTA123T Datasheet HTML 4Page - NXP Semiconductors PDTA123T Datasheet HTML 5Page - NXP Semiconductors PDTA123T Datasheet HTML 6Page - NXP Semiconductors PDTA123T Datasheet HTML 7Page - NXP Semiconductors PDTA123T Datasheet HTML 8Page - NXP Semiconductors PDTA123T Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 10 page
background image
PDTA123T_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 September 2009
4 of 10
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 k
Ω, R2 = open
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
µm copper strip line, standard footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
µm copper strip line, standard footprint.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−50
V
VCEO
collector-emitter voltage
open base
-
−50
V
VEBO
emitter-base voltage
open collector
-
−5V
IO
output current
-
−100
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
150
mW
SOT346
[1] -
250
mW
SOT883
[2][3] -
250
mW
SOT54
[1] -
500
mW
SOT23
[1] -
250
mW
SOT323
[1] -
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1] -
-
833
K/W
SOT346
[1] -
-
500
K/W
SOT883
[2][3] -
-
500
K/W
SOT54
[1] -
-
250
K/W
SOT23
[1] -
-
500
K/W
SOT323
[1] -
-
625
K/W


Similar Part No. - PDTA123T

ManufacturerPart #DatasheetDescription
logo
Nexperia B.V. All right...
PDTA123T NEXPERIA-PDTA123T Datasheet
198Kb / 11P
   PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02 - 3 September 2009
PDTA123TE NEXPERIA-PDTA123TE Datasheet
585Kb / 10P
   NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 01 - 10 March 2006
PDTA123TE NEXPERIA-PDTA123TE Datasheet
198Kb / 11P
   PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02 - 3 September 2009
PDTA123TK NEXPERIA-PDTA123TK Datasheet
585Kb / 10P
   NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 01 - 10 March 2006
PDTA123TK NEXPERIA-PDTA123TK Datasheet
198Kb / 11P
   PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02 - 3 September 2009
More results

Similar Description - PDTA123T

ManufacturerPart #DatasheetDescription
logo
Nexperia B.V. All right...
PDTA123T_SER NEXPERIA-PDTA123T_SER Datasheet
198Kb / 11P
   PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02 - 3 September 2009
logo
NXP Semiconductors
PEMB20 NXP-PEMB20 Datasheet
71Kb / 11P
   PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 03-1 September 2009
PEMB30_PUMB30 PHILIPS-PEMB30_PUMB30_15 Datasheet
76Kb / 10P
   PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02-2 September 2009
PEMB20_PUMB20 PHILIPS-PEMB20_PUMB20_15 Datasheet
71Kb / 11P
   PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 03-1 September 2009
logo
Nexperia B.V. All right...
PEMB20 NEXPERIA-PEMB20 Datasheet
71Kb / 11P
   PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 03 - 1 September 2009
logo
NXP Semiconductors
PEMB30 NXP-PEMB30 Datasheet
76Kb / 10P
   PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02-2 September 2009
logo
Nexperia B.V. All right...
PEMB30 NEXPERIA-PEMB30 Datasheet
191Kb / 11P
   PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 02 - 2 September 2009
logo
NXP Semiconductors
PDTA123Y NXP-PDTA123Y Datasheet
123Kb / 18P
   PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009
logo
Nexperia B.V. All right...
PDTC123T_SER NEXPERIA-PDTC123T_SER Datasheet
585Kb / 10P
   NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open
Rev. 01 - 10 March 2006
logo
NXP Semiconductors
PEMD20_PUMD20 PHILIPS-PEMD20_PUMD20_15 Datasheet
65Kb / 10P
   NPN/PNP resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-2 May 2005
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com