Electronic Components Datasheet Search |
|
PDTA114EE Datasheet(PDF) 5 Page - NXP Semiconductors |
|
PDTA114EE Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page 2004 Aug 02 5 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 k Ω, R2 = 10 kΩ PDTA114E series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 − − −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 − − −1 μA VCE = −30 V; IB = 0; Tj = 150 °C − − −50 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −400 μA hFE DC current gain VCE = −5 V; IC = −5 mA 30 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV Vi(off) input-off voltage IC = −100 μA; VCE = −5 V − −1.1 −0.8 V Vi(on) input-on voltage IC = −10 mA; VCE = −0.3 V −2.5 −1.8 − V R1 input resistor 7 10 13 k Ω resistor ratio 0.8 1 1.2 Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 3 pF R2 R1 -------- |
Similar Part No. - PDTA114EE |
|
Similar Description - PDTA114EE |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |