PBSS5350X datasheet(9/12 Pages) NXP

Part #	PBSS5350X

Description	50 V, 3 A PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9 / 12 page

2004 Nov 04

9

NXP Semiconductors

Product data sheet

50 V, 3 A

PNP low VCEsat (BISS) transistor

PBSS5350X

handbook, halfpage

−0.2

−1.2

−0.4

−0.6

−0.8

−1

MLE175

−10−1

−1

−10

IC (mA)

VBEsat

(V)

−102

−103

−104

(3)

(2)

(1)

Fig.10 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

103

102

10

1

10−2

10−1

MLE172

−10−1

−1

−10

IC (mA)

RCEsat

(

Ω)

−103

−102

−104

(1)

(3)

(2)

Fig.11 Equivalent on-resistance as a function of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

0

−2

−1

0

−0.2

−0.4

−0.6

−0.8

−0.4

VCE (V)

IC

(A)

−0.8

−1.2

−1.6

MLE168

(1)

(6)

(9)

(10)

(7)

(5)

(4)

(3)

(2)

(8)

Fig.12 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −3500 μA.

(2) IB = −3150 μA.

(3) IB = −2800 μA.

(4) IB = −2450 μA.

(5) IB = −2100 μA.

(6) IB = −1750 μA.

(7) IB = −1400 μA.

(8) IB = −1050 μA.

(9) IB = −700 μA.

(10) IB = −350 μA.

Tamb = 25 °C.

handbook, halfpage

0

−2

−5

0

−1

−2

−3

−4

−0.4

VCE (V)

IC

(A)

−0.8

−1.2

−1.6

MLE169

(1)

(9)

(2)

(3)

(4)

(5)

(6)

(7)

(10)

(8)

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −140 mA.

(2) IB = −126 mA.

(3) IB = −112 mA.

(4) IB = −98 mA.

(5) IB = −84 mA.

(6) IB = −70 mA.

(7) IB = −56 mA.

(8) IB = −42 mA.

(9) IB = −28 mA.

(10) IB = −14 mA.

Tamb = 25 °C.

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