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PBLS6005D Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBLS6005D Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page PBLS6005D_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 7 September 2009 6 of 16 NXP Semiconductors PBLS6005D 60 V PNP BISS loadswitch 7. Characteristics Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa464 10 1 102 103 Zth(j-a) (K/W) 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01 0 Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor ICBO collector-base cut-off current VCB = −60 V; IE =0A - - −100 nA VCB = −60 V; IE =0A; Tj = 150 °C -- −50 µA ICES collector-emitter cut-off current VCE = −60 V; VBE =0V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 200 350 - VCE = −5V; IC = −500 mA [1] 150 230 - VCE = −5V; IC = −1000 mA [1] 100 160 - VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1mA - −110 −175 mV IC = −500 mA; IB = −50 mA [1] - −135 −180 mV IC = −1000 mA; IB = −100 mA [1] - −255 −340 mV RCEsat collector-emitter saturation resistance IC = −1A; IB = −100 mA [1] - 255 340 m Ω VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - −0.95 −1.1 V |
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