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PBHV9040T Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBHV9040T Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page PBHV9040T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 15 January 2009 5 of 12 NXP Semiconductors PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −320 V; IE =0A - - −100 nA VCB = −320 V; IE =0A; Tj = 150 °C -- −10 µA ICES collector-emitter cut-off current VCE = −320 V; VBE =0V - - −100 nA IEBO emitter-base cut-off current VEB = −4 V; IC =0A - - −100 nA hFE DC current gain VCE = −10 V IC = −50 mA 100 200 - IC = −100 mA 80 200 - IC = −250 mA [1] 10 25 - VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −20 mA - −110 −200 mV VBEsat base-emitter saturation voltage IC = −100 mA; IB = −20 mA [1] - −1 −1.1 V fT transition frequency VCE = −10 V; IE = −10 mA; f = 100 MHz - 55 - MHz Cc collector capacitance VCB = −20 V; IE =ie =0A; f=1MHz -7 -pF Ce emitter capacitance VEB = −0.5 V; IC =ic =0A; f=1MHz - 150 - pF td delay time VCC = −2 V; IC = −0.15 A; IBon = −0.03 A; IBoff = 0.03 A -9 -ns tr rise time - 1810 - ns ton turn-on time - 1819 - ns ts storage time - 715 - ns tf fall time - 1085 - ns toff turn-off time - 1800 - ns |
Similar Part No. - PBHV9040T_09 |
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Similar Description - PBHV9040T_09 |
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