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XC61HN1622MR-G Datasheet(PDF) 3 Page - Torex Semiconductor

Part # XC61HN1622MR-G
Description  Voltage Detector with Delay Circuit Built-In
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Manufacturer  TOREX [Torex Semiconductor]
Direct Link  http://www.torex.co.jp
Logo TOREX - Torex Semiconductor

XC61HN1622MR-G Datasheet(HTML) 3 Page - Torex Semiconductor

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XC61H
Series
PARAMETER
SYMBOL
RATINGS
UNITS
Input Voltage
VIN
12.0
V
Output Current
IOUT
50
mA
CMOS
VSS-0.3 ~VIN+0.3
Output Voltage
N-ch open drain
RESTB
VSS -0.3 ~ 12
V
Power Dissipation
SOT-23
Pd
250
mW
Operating Temperature Range
Topr
-30~+80
Storage Temperature Range
Tstg
-40~+125
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
CIRCUIT
Detect Voltage
VDF
VDF(T)
x 0.98
VDF(T)
VDF(T)
x 1.02
V
Hysteresis Width
VHYS
VDF
x 0.02
VDF
x 0.05
VDF
x 0.08
V
VIN = 1.5V
-
0.9
2.6
VIN = 2.0V
-
1.0
3.0
VIN = 3.0V
-
1.3
3.4
VIN = 4.0V
-
1.6
3.8
Supply Current
(*1)
ISS
VIN = 5.0V
-
2.0
4.2
μ
A
Operating Voltage
VIN
VDF=1.6V~6.0V
0.7
-
10.0
V
VIN = 1.0V
1.0
2.2
-
VIN = 2.0V
3.0
7.7
-
N-ch, VDS = 0.5V
VIN = 3.0V
5.0
10.1
-
VIN = 4.0V
6.0
11.5
-
VIN = 5.0V
7.0
13.0
-
Output Current
IOUT
P-ch, VDS=2.1V
(CMOS Output)
VIN = 8.0V
-10.0
-2.0
mA
CMOS Output
-
0.01
-
Leakage
Current
Nch Open Drain
ILEAK
VIN=10.0V, VOUT=10.0V
-
0.01
0.1
μ
A
Detect Voltage
Temperature Characteristics
Δ
VDF
Δ
Topr・VDF
-
±100
-
ppm/℃
-
50
-
200
80
-
400
Release Delay Time
(VDR → RESEB inversion)
tDR
VIN changes from 0.6V to 10V
1
-
50
ms
Ta=25℃
VDF (T) is nominal detect voltage value
Release Voltage: VDR = VDF + VHYS
(*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period
after the completion of release operation because of the shoot-through current in delay current.
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
ELECTRICAL CHARACTERISTICS


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