PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2 – APRIL 94

FEATURES

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Battery powered circuits

* Motor drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-25

V

Collector-Emitter Voltage

-25

V

Emitter-Base Voltage

-5

V

Peak Pulse Current

-8

A

Continuous Collector Current

-3

A

Practical Power Dissipation*

1.5

W

derate above 25°C

1

5.7

W

mW/°C

Operating and Storage Temperature Range

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

-25

V

Collector-Emitter Breakdown

Voltage

-25

V

Emitter-Base Breakdown

Voltage

-5

V

Collector Cut-Off Current

-0.1

µ

A

Emitter Cut-Off Current

-0.1

µ

A

Collector-Emitter Saturation

Voltage

-0.25

-0.45

-0.5

V

V

V

Base-Emitter

Saturation Voltage

-1.0

V

Base-Emitter

Turn-On Voltage

-0.8

V

Static Forward Current

Transfer Ratio

300

250

200

100

800

E-Line

TO92 Compatible

ZTX789A

3-276

C

B

E

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Transition Frequency

100

MHz

f=50MHz

Input Capacitance

225

pF

Output Capacitance

25

pF

Switching Times

35

400

ns

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Junction to Case

175

116

70

°C/W

°C/W

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX789A

-40

0.0001

Derating curve

T -Temperature (°C)

Maximum transient thermal impedance

Pulse Width (seconds)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

1.0

0.5

2.0

1.5

Case

temperature

2.5

Ambient

temperat

ure

0

D=1 (D.C.)

3-277