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ZTX789 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZTX789 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 3 page PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -25 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µ A VCB=-15V Emitter Cut-Off Current IEBO -0.1 µ A VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.45 -0.5 V V V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 100 800 IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* E-Line TO92 Compatible ZTX789A 3-276 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Transition Frequency fT 100 MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 25 pF VCB=-10V, f=1MHz Switching Times ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) 175 116 70 °C/W °C/W °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX789A -40 0.0001 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 D=0.2 D=0.1 Single Pulse D=0.5 t1 tP D=t1/tP 1.0 0.5 2.0 1.5 Case temperature 2.5 Ambient temperat ure 0 D=1 (D.C.) 3-277 |
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