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ZXMHC3F381N8 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXMHC3F381N8 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 11 page ZXMHC3F381N8 Issue 1.0 - March 2009 2 © Diodes Incorporated www.diodes.com Absolute maximum ratings Parameter Symbol N- channel P- channel Unit Drain-Source voltage VDSS 30 -30 V Gate-Source voltage VGS ±20 ±20 V Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (f) ID 4.98 3.98 3.98 4.17 -4.13 -3.31 -3.36 -3.51 A Pulsed Drain current @ VGS= 10V; TA=25°C (c) IDM 22.9 -19.6 A Continuous Source current (Body diode) at TA =25°C (b) IS 2.0 -2.0 A Pulsed Source current (Body diode) at TA =25°C (c) ISM 22.9 -19.6 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.87 6.94 W mW/ °C Power dissipation at TA =25°C (b) Linear derating factor PD 1.35 10.9 W mW/ °C Power dissipation at TL =25°C (f) Linear derating factor PD 0.95 7.63 0.98 7.81 W mW/ °C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) RθJA 144 °C/W Junction to ambient (b) RθJA 92 °C/W Junction to ambient (d) RθJA 106 °C/W Junction to ambient (e) RθJA 254 °C/W Junction to lead (f) RθJL 131 128 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (b) Same as note (a), except the device is measured at t ≤ 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. (f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die. |
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